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1

Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

Peter Storck, Martin Vorderwestner, Alexey Kondratyev, Roman Talalaev, Art Amamchyan, Egbert Woelk

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.32 MB

english, 2010

2

MOVPE process for horizontal reactors with reduced parasitic deposition

H. Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 504 KB

english, 2004

3

Optimization of deposition uniformity during silicon epitaxy in deep trenches

Segal, Alexander, Yakovlev, Eugene, Bazarevskiy, Denis, Talalaev, Roman, Ziad, Hocine, Genne, Jelle, Koops, Gerhard, Meersman, Johan, De Pestel, Freddy, Tack, Marnix

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 829 KB

english, 2018

4

Modeling of bulk GaN crystal growth from gallium-sodium solution

Vorob'ev, Andrei, Kondratyev, Alexey, Kalaev, Vladimir, Talalaev, Roman

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 7.35 MB

2020

5

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

K.M. Mazaev, A.V. Lobanova, E.V. Yakovlev, R.A. Talalaev, A.O. Galyukov, Yu.N. Makarov, D. Gotthold, B. Albert, L. Kadinski, B. Peres

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 394 KB

english, 2004

6

Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, B.S. Yavich, W.N Wang

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 422 KB

english, 2004

7

Kinetics of SiGe chemical vapor deposition from chloride precursors

A.A. Lovtsus, A.S. Segal, A.P. Sid’ko, R.A. Talalaev, P. Storck, L. Kadinski

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 315 KB

english, 2006

8

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

M. Dauelsberg, C. Martin, H. Protzmann, A.R. Boyd, E.J. Thrush, J. Käppeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 507 KB

english, 2007

9

Analysis of silicon carbide growth by sublimation sandwich method

S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, R.A. Talalaev, Yu.A. Vodakov

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 715 KB

english, 1997

10

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov, J.-T. Zettler

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 317 KB

english, 2004

11

The quantum Gaudin system

Journal:

Functional Analysis and Its Applications

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

12

Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, G. É. Tsyrlin, N. D. Zakharov

Journal:

Physics of the Solid State

Year:

2007

Language:

english

File:

PDF, 264 KB

english, 2007

13

Hitchin System on Singular Curves

D. V. Talalaev, A. V. Chervov

Journal:

Theoretical and Mathematical Physics

Year:

2004

Language:

english

File:

PDF, 364 KB

english, 2004

14

Sb mediated formation of Ge/Si quantum dots: Growth and properties

A.A. Tonkikh, N.D. Zakharov, A.V. Novikov, K.E. Kudryavtsev, V.G. Talalaev, B. Fuhrmann, H.S. Leipner, P. Werner

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 496 KB

english, 2012

15

Interdot carrier transfer in asymmetric bilayer InAsâGaAs quantum dot structures

Mazur, Yu. I., Wang, Zh. M., Tarasov, G. G., Xiao, Min, Salamo, G. J., Tomm, J. W., Talalaev, V., Kissel, H.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 278 KB

english, 2005

16

Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

Senichev, Alexander V., Talalaev, Vadim G., Shtrom, Igor V., Blumtritt, Horst, Cirlin, George E., Schilling, Jörg, Lienau, Christoph, Werner, Peter

Journal:

Year:

2014

Language:

english

File:

PDF, 3.26 MB

english, 2014

17

[IEEE 2011 IEEE 8th International Conference on Group IV Photonics (GFP) - London, United Kingdom (2011.09.14-2011.09.16)] 8th IEEE International Conference on Group IV Photonics - Sb mediated Ge/Si(100) quantum dots for Si based photonics

Tonkikh, A.A., Zakharov, N.D., Novikov, A.V., Kudryavtsev, K., Talalaev, V.G., Fuhrmann, B., Leipner, H.S., Davydov, V. Yu., Smirnov, A.N., Werner, P.

Year:

2011

Language:

english

File:

PDF, 259 KB

english, 2011

18

Transient spectroscopy of InAs quantum dot molecules

Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Novikov, B. V., Tonkikh, A. A.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 523 KB

english, 2004

19

Optically pumped semiconductor disk laser with graded and step indices

Saas, Florian, Talalaev, Vadim, Griebner, Uwe, Tomm, Jens W., Zorn, Martin, Knigge, Andrea, Weyers, Markus

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 390 KB

english, 2006

20

Cold metal transfer (CMT) welding of thin sheet metal products

Talalaev, R, Veinthal, R, Laansoo, A, Sarkans, M

Journal:

Estonian Journal of Engineering

Year:

2012

Language:

english

File:

PDF, 4.25 MB

english, 2012

21

Problem of constructing wide-band acoustooptic deflectors

I. A. Deryugin, A. P. Pogibel'skiĭ, M. A. Talalaev, G. E. Teterin

Year:

1980

Language:

english

File:

PDF, 204 KB

english, 1980

22

On the Possible Origins of Low Indium Incorporation during MOVPE of InGaN

R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, I. Yu. Estratov, A. N. Vorobev, Yu. N. Makarov

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 118 KB

english, 1999

23

Growth Kinetics of GaN in Ammonia Atmosphere

S. Yu Karpov, R. A. Talalaev, Yu. N. Makarov, N. Grandjean, J. Massies, B. Damilano

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 150 KB

english, 1999

24

Indium Incorporation and Droplet Formation during InGaN Molecular Beam Epitaxy

O. V. Bord, R. A. Talalaev, S. Yu. Karpov, Yu. N. Makarov

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

25

Radiative Recombination Features of Metastable Quantum Dot Array

V.G. Talalaev, B.V. Novikov, G. Gobsch, R. Goldhahn, N. Stein, J.W. Tomm, A. Maassdorf, G.E. Cirlin, V.N. Petrov, V.M. Ustinov

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

26

Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

G.E. Cirlin, V.G. Talalaev, N.D. Zakharov, V.A. Egorov, P. Werner

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 127 KB

english, 2002

27

Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures

S.Yu. Karpov, R.A. Talalaev, I.Yu. Evstratov, Yu.N. Makarov

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 163 KB

english, 2002

28

On improving the estimates of the solutions of the system of linear differential equations with variable coefficients

A.G. Piliutik, P.A. Talalaev

Journal:

Journal of Applied Mathematics and Mechanics

Year:

1965

Language:

english

File:

PDF, 443 KB

english, 1965

29

Microscopic Si whiskers

S. Kalem, P. Werner, M. Hagberg, B. Nilsson, V. Talalaev, Ö. Arthursson, H. Frederiksen, U. Södervall

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 499 KB

english, 2011

30

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

A.V. Kondratyev, R.A. Talalaev, W.V. Lundin, A.V. Sakharov, A.V. Tsatsul’nikov, E.E. Zavarin, A.V. Fomin, D.S. Sizov

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 204 KB

english, 2004

31

Effect of V/III ratio in AlN and AlGaN MOVPE

A.V. Lobanova, K.M. Mazaev, R.A Talalaev, M. Leys, S. Boeykens, K. Cheng, S. Degroote

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 321 KB

english, 2006

32

Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsin, A.F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

33

Influence of the reactor inlet configuration on the AlGaN growth efficiency

E.V. Yakovlev, R.A. Talalaev, N. Kaluza, H. Hardtdegen, H.L. Bay

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 417 KB

english, 2007

34

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

C. Martin, M. Dauelsberg, H. Protzmann, A.R. Boyd, E.J. Thrush, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 372 KB

english, 2007

35

Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates

T. Kunz, I. Burkert, R. Auer, A.A. Lovtsus, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 619 KB

english, 2008

36

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, R.A. Talalaev, A.S. Segal, A.V. Lobanova, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.F. Tsatsulnikov, A.E. Nikolaev

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 374 KB

english, 2008

37

Growth conditions and surface morphology of AlN MOVPE

A.V. Lobanova, E.V. Yakovlev, R.A Talalaev, S.B. Thapa, F. Scholz

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 219 KB

english, 2008

38

On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 134 KB

english, 2001

39

Analysis of gallium nitride growth by gas-source molecular beam epitaxy

S.Yu Karpov, Yu.N Makarov, M.S Ramm, R.A Talalaev

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 105 KB

english, 1998

40

Benchmarking of evaluated nuclear data for bismuth by spherical shell transmission experiments with central T(d,n) and Cf-252 neutron sources

S.P Simakov, B.V Devkin, M.G Kobozev, V.A Talalaev, U von Möllendorff

Journal:

Fusion Engineering and Design

Year:

1999

Language:

english

File:

PDF, 192 KB

english, 1999

41

Gallium droplet formation during MOVPE and thermal annealing of GaN

S.Yu Karpov, O.V Bord, R.A Talalaev, Yu.N Makarov

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

42

Analysis of vaporization kinetics of group-III nitrides

M.V. Averyanova, I.N. Przhevalskii, S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 511 KB

english, 1997

43

Control of SiC growth and graphitization in sublimation sandwich system

S.Yu. Karpova, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

44

Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix

George E. Cirlin, Vadim G. Talalaev, Vyatcheslav A. Egorov, Nikolai D. Zakharov, Peter Werner, Nikolai N. Ledentsov, Victor M. Ustinov

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 592 KB

english, 2003

45

Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 92 KB

english, 2003

46

Room temperature electroluminescence from multilayer GeSi heterostructures

A. A. Tonkikh, G. E. Cirlin, V. G. Talalaev, N. D. Zakharov, P. Werner

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

47

Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin

Journal:

physica status solidi (b)

Year:

2010

Language:

english

File:

PDF, 250 KB

english, 2010

48

Front Cover (Phys. Status Solidi B 2/2010)

M. B. Smirnov, V. G. Talalaev, B. V. Novikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin

Journal:

physica status solidi (b)

Year:

2010

File:

PDF, 867 KB

2010

49

Indium Segregation in MOVPE Grown InGaN-Based Heterostructures

R.A. Talalaev, S.Yu. Karpov, I.Yu. Evstratov, Yu.N. Makarov

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 70 KB

english, 2003

50

Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

E. V. Yakovlev, R. A. Talalaev, R. W. Martin, C. Jeynes, N. Peng, C. J. Deatcher, I. M. Watson

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006